Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Composite etching stop in semiconductor process integration

Composite etching stop in semiconductor process integration

US Patent 7042049 · Granted May 9, 2006

Estimated economic value: $6,588,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Device having an air gap adjacent to a contact plug and covered by a doped diele2025
Low-k dielectric and processes for forming same2025
Semiconductor device with two-dimensional materials2025
Semiconductor device and method of manufacturing semiconductor device2025
Patterning interconnects and other structures by photo-sensitizing method2025
Method for forming semiconductor structure with high aspect ratio2025
Resistive memory devices using a carbon-based conductor line and methods for for2025
Method and structure for semiconductor device having gate spacer protection laye2025
System and method of forming a porous low-k structure2025
Structure and method for a low-k dielectric with pillar-type air-gaps2025
Semiconductor structure of stacked two-dimensional material layers2025
DC bias in plasma process2025