Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for deep trench etching through a buried insulator layer

Method for deep trench etching through a buried insulator layer

US Patent 6995094 · Granted Feb 7, 2006

Estimated economic value: $5,045,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Virtual bulk in semiconductor on insulator technology2022
Heterojunction bipolar transistor with marker layer2022
Heterojunction bipolar transistor2021
Complementary transistor structures formed with the assistance of doped-glass la2021
Transistor with recessed cross couple for gate contact over active region integr2020
Integrated circuit products with gate structures positioned above elevated isola2020
Methods of forming vertical field effect transistors with self-aligned contacts 2019
Implant after through-silicon via (TSV) etch to getter mobile ions2019
Non-volatile memory device employing a deep trench capacitor2018
Trench metal insulator metal capacitor with oxygen gettering layer2018
Methods to control fin tip placement2017
Deep trench capacitor with metal plate2017