Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Non-volatile memory device employing a deep trench capacitor

Non-volatile memory device employing a deep trench capacitor

US Patent 10083967 · Granted Sep 25, 2018

Estimated economic value: $24,598,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Display screen or portion thereof with transitional graphical user interface2025
Display screen or portion thereof with graphical user interface2025
Method for making nanostructure transistors with source/drain trench contact lin2025
Oxide-based resistive memory having a plasma-exposed bottom electrode2025
Method for making nanostructure transistors with offset source/drain dopant bloc2024
Method for making nanostructure transistors with flush source/drain dopant block2024
Method for controlling the forming voltage in resistive random access memory dev2023
Oxide-based resistive memory having a plasma-exposed bottom electrode2023
Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor2023
RRAM filament location based on NIR emission2022
Virtual bulk in semiconductor on insulator technology2022
Quad-layer high-k for metal-insulator-metal capacitors2022