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Home › Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability

Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability

US Patent 6992337 · Granted Jan 31, 2006

Estimated economic value: $6,935,000 ⓘ

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