Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates

Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates

US Patent 9064928 · Granted Jun 23, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Asymmetrical plug technique for GaN devices2023
Method of fabricating a transistor2023
Asymmetrical plug technique for GaN devices2022
Method and circuitry for controlling a depletion-mode transistor2022
System and method for surge-testing a gallium nitride transistor device2022
Gate stack for heterostructure device2021
Overvoltage protection and short-circuit withstanding for gallium nitride device2021
Integrated resistor for semiconductor device2021
Protective insulator for HFET devices2021
Asymmetrical plug technique for GaN devices2020
Protective insulator for HFET devices2020
Integrated resistor for semiconductor device2019