Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layer

Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layer

US Patent 8946780 · Granted Feb 3, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and circuitry for controlling a depletion-mode transistor2022
System and method for surge-testing a gallium nitride transistor device2022
Overvoltage protection and short-circuit withstanding for gallium nitride device2021
Trench DMOS transistor with reduced gate-to-drain capacitance2020
High voltage device with multi-electrode control2019
Overvoltage protection and short-circuit withstanding for gallium nitride device2019
High-resolution power electronics measurements2018
High voltage device with multi-electrode control2018
Method and circuitry for controlling a depletion-mode transistor2017
Trench DMOS transistor with reduced gate-to-drain capacitance2017
Growth of multi-layer group III-nitride buffers on large-area silicon substrates2015
Growth of multi-layer group III-nitride buffers on large-area silicon substrates2015