Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single poly-emitter PNP using DWELL diffusion in a BiCMOS technology

Single poly-emitter PNP using DWELL diffusion in a BiCMOS technology

US Patent 6949424 · Granted Sep 27, 2005

Estimated economic value: $31,528,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Contact array optimization for ESD devices2018
Vertical ESD protection device2014
Integrated high voltage capacitor having capacitance uniformity structures and a2012
Integrated high voltage capacitor having capacitance uniformity structures and a2012
Verification method with the implementation of well voltage pseudo diodes2011
Versatile system for optimizing current gain in bipolar transistor structures2009
Edge recognition based high voltage pseudo layer verification methodology for mi2009
Integrated high voltage capacitor having capacitance uniformity structures and a2008
Versatile system for optimizing current gain in bipolar transistor structures2007
Single poly-emitter PNP using dwell diffusion in a BiCMOS technology2007
Memory device with reduced cell size2005
Transistors formed with grid or island implantation masks to form reduced diffus2005