Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps

Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps

US Patent 6869851 · Granted Mar 22, 2005

Estimated economic value: $18,900,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor doped region with biased isolated members2025
Vehicle fairing2024
Vehicle fairing2024
Integrated drive box and heat exchanger and systems2024
Semiconductor doped region with biased isolated members2023
Dry product additive unit2023
Dual pump integrated fracking system2023
MOS transistor with folded channel and folded drift region2022
Integrated schottky diode with guard ring2022
Fluid for use in power production environments2021
MOS transistor with folded channel and folded drift region2021
Thermoregulating gelpack2021