Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof

Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof

US Patent 6887783 · Granted May 3, 2005

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Redundant bottom pad and sacrificial via contact for process induced RRAM formin2025
Top contact on resistive random access memory2025
Conductive oxide diffusion barrier for laser crystallization2025
Process-induced forming of oxide RRAM2025
Antenna assisted ReRAM formation2025
Field effect transistor with shallow trench isolation features within source/dra2025
Phase change memory programming current leakage reduction2025
Heterojunction bipolar transistor with buried trap rich isolation region2025
Resistive random-access memory structures with stacked transistors2025
High electron mobility transistors having barrier liners and integration schemes2025
Uniform voltage drop in arrays of memory devices2025
Semiconductor device identification using preformed resistive memory2025