Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

US Patent 6882015 · Granted Apr 19, 2005

Estimated economic value: $7,105,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Darlington pair bipolar junction transistor sensor2024
Assembly including plural through wafer vias, method of cooling the assembly and2024
Direct growth of lateral III-V bipolar transistor on silicon substrate2024
Series connected stacked vertical transistors for high voltage applications2024
Vertical bipolar junction transistor with all-around extrinsic base and epitaxia2023
Probe assembly for process vessels2023
Stacked vertical transport field effect transistor electrically erasable program2023
Nanosheet transistor with body contact2022
Stacked vertical transistor erasable programmable read-only memory and programma2022
III-V lateral bipolar junction transistor on local facetted buried oxide layer2022
III-V lateral bipolar junction transistor on local facetted buried oxide layer2022
Biosensors including surface resonance spectroscopy and semiconductor devices2022