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Home › SOI wafers with 30-100 å buried oxide (BOX) created by wafer bonding using 30-100 å thin oxide as bonding layer

SOI wafers with 30-100 å buried oxide (BOX) created by wafer bonding using 30-100 å thin oxide as bonding layer

US Patent 6835633 · Granted Dec 28, 2004

Estimated economic value: $11,084,000 ⓘ

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