Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes

Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes

US Patent 6803313 · Granted Oct 12, 2004

Estimated economic value: $4,245,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mask for forming integrated circuit2014
Mask for forming integrated circuit2014
Gap-filling with uniform properties2013
Low-H plasma treatment with N2 anneal for electronic memory devices2012
Low-H plasma treatment with N2 anneal for electronic memory devices2012
Cu annealing for improved data retention in flash memory devices2011
Gap-filling with uniform properties2011
Semiconductor devices with copper interconnects and composite silicon nitride ca2009
Method for forming integrated circuit2009
Method for forming integrated circuit2009
Disposable spacer process for field effect transistor fabrication2009
Method for manufacturing a memory device having a nanocrystal charge storage reg2008