Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

US Patent 6768141 · Granted Jul 27, 2004

Estimated economic value: $5,481,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and circuitry for controlling a depletion-mode transistor2022
System and method for surge-testing a gallium nitride transistor device2022
Overvoltage protection and short-circuit withstanding for gallium nitride device2021
High voltage device with multi-electrode control2019
Overvoltage protection and short-circuit withstanding for gallium nitride device2019
High-resolution power electronics measurements2018
High voltage device with multi-electrode control2018
Method and circuitry for controlling a depletion-mode transistor2017
Growth of multi-layer group III-nitride buffers on large-area silicon substrates2015
Growth of multi-layer group III-nitride buffers on large-area silicon substrates2015
Ohmic contact schemes for group III-V devices having a two-dimensional electron 2015
Configuration and fabrication of semiconductor structure using empty and filled 2014