Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties

Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties

US Patent 6720264 · Granted Apr 13, 2004

Estimated economic value: $3,617,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Damascene metal-insulator-metal (MIM) device with improved scaleability2016
Metal-insualtor-metal (MIM) device and method of formation thereof2015
Metal-insulator-metal (MIM) device and method of formation thereof2014
Diode and resistive memory device structures2014
Replacement gate approach for high-k metal gate stacks by using a multi-layer co2014
Metal-insulator-metal-insulator-metal (MIMIM) memory device2014
Self-aligned multiple gate transistor formed on a bulk substrate2014
Planarization of a material system in a semiconductor device by using a non-sele2013
Electrochemical planarization system comprising enhanced electrolyte flow2013
Metal-insulator-metal (MIM) device and method of formation thereof2013
Semiconductor device formed by a replacement gate approach based on an early wor2013
Methods for forming a memory cell having a top oxide spacer2013