Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion

Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion

US Patent 6593623 · Granted Jul 15, 2003

Estimated economic value: $1,952,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices having stressor regions and related fabrication methods2016
Self-aligned silicidation for replacement gate process2014
Electronic device and method of biasing2014
Method of fabricating multi-fingered semiconductor devices on a common substrate2013
Semiconductor devices having stressor regions and related fabrication methods2013
Transistor with asymmetric silicon germanium source region2013
Self-aligned silicidation for replacement gate process2013
Semiconductor device and methods for fabricating same2011
Transistor with asymmetric silicon germanium source region2011
Compensating for layout dimension effects in semiconductor device modeling2010
Method for fabricating a semiconductor device having an extended stress liner2010
Stress enhanced semiconductor device and methods for fabricating same2009