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Home › Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits

Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits

US Patent 6586347 · Granted Jul 1, 2003

Estimated economic value: $4,961,000 ⓘ

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