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Home › Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed

Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed

US Patent 6489253 · Granted Dec 3, 2002

Estimated economic value: $4,258,000 ⓘ

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