{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Dynamic threshold voltage devices with low gate to substrate resistance", "item": "https://www.patentleaderboard.com/patent/6459106"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dynamic threshold voltage devices with low gate to substrate resistance

Dynamic threshold voltage devices with low gate to substrate resistance

US Patent 6459106 · Granted Oct 1, 2002

Estimated economic value: $10,556,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Isolation region fabrication for replacement gate processing2024
Isolation region fabrication for replacement gate processing2021
Vertical field effect transistors2021
Transistor channel having vertically stacked nanosheets coupled by fin-shaped br2021
Vertical field effect transistors2021
Neuromorphic circuit structure and method to form same2021
Fabrication of a vertical field effect transistor device with a modified vertica2021
Transistor channel having vertically stacked nanosheets coupled by fin-shaped br2021
Vertical field effect transistors2021
Self-aligned via forming to conductive line and related wiring structure2020
Simplified memory cells based on fully-depleted silicon-on-insulator transistors2020
Variable gate lengths for vertical transistors2020