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Home › Process for planarization of metal-filled trenches of integrated circuit structures by forming a layer of planarizable material over the metal layer prior to planarizing

Process for planarization of metal-filled trenches of integrated circuit structures by forming a layer of planarizable material over the metal layer prior to planarizing

US Patent 6417093 · Granted Jul 9, 2002

Estimated economic value: $6,571,000 ⓘ

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