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Home › Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing

Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing

US Patent 7531442 · Granted May 12, 2009

Estimated economic value: $20,632,000 ⓘ

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