Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Optimized single side pocket implant location for a field effect transistor

Optimized single side pocket implant location for a field effect transistor

US Patent 6396103 · Granted May 28, 2002

Estimated economic value: $2,985,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and meth2004
Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insul2004
Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MO2003
Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MO2003
Selective epitaxy to reduce gate/gate dielectric interface roughness2003
Selective epitaxy to reduce gate/gate dielectric interface roughness2003
SOI device with body recombination region, and method2003
Method of making recessed source drains to reduce fringing capacitance2003
Raised S/D region for optimal silicidation to control floating body effects in S2003
Deposited screen oxide for reducing gate edge lifting2003
Removal of heat from SOI device2003
Method of programming a non-volatile memory cell using a vertical electric field2002