Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same

Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same

US Patent 6380606 · Granted Apr 30, 2002

Estimated economic value: $8,766,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-bypass diode function for gallium arsenide photovoltaic devices2023
Self-bypass diode function for gallium arsenide photovoltaic devices2021
Self-bypass diode function for gallium arsenide photovoltaic devices2021
Optoelectronic devices including heterojunction and intermediate layer2021
High power gallium nitride electronics using miscut substrates2020
Photovoltaic device with back side contacts2020
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2019
Customized polishing pads for CMP and methods of fabrication and use thereof2019
Optoelectronic devices including heterojunction and intermediate layer2018
Self-bypass diode function for gallium arsenide photovoltaic devices2017
Textured metallic back reflector2017