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System and method for the abatement of toxic constituents of effluent gases |
Steven M. Browne, James L. Flack, Mark Mitchell |
2004-10-05 |
| 6670242 |
Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer |
Yi Ma, Pradip K. Roy |
2003-12-30 |
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Method and structure for oxide/silicon nitride interface substructure improvements |
Pradip K. Roy, Carlos M. Chacon |
2003-04-15 |
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Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same |
Isik C. Kizilyalli, Pradip K. Roy, Hem M. Vaidya |
2002-04-30 |
| 6281138 |
System and method for forming a uniform thin gate oxide layer |
Isik C. Kizilyalli, Yi Ma, Pradip K. Roy |
2001-08-28 |
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System and method for forming a uniform thin gate oxide layer |
Yi Ma, Pradip K. Roy |
2001-06-12 |
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Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same |
Isik C. Kizilyalli, Pradip K. Roy, Hem M. Vaidya |
2000-07-18 |
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Use of SiD.sub.4 for deposition of ultra thin and controllable oxides |
Isik C. Kizilyalli, Yi Ma, Pradip K. Roy |
2000-02-15 |
| 5966627 |
In-situ doped silicon layers |
Yaw S. Obeng |
1999-10-12 |
| 5940736 |
Method for forming a high quality ultrathin gate oxide layer |
Yi Ma, Pradip K. Roy |
1999-08-17 |