Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
DB

David C. Brady — 10 Patents

ATAT&T: 4 patents #4,409 of 18,772Top 25%
ASAgere Systems: 3 patents #475 of 1,849Top 30%
AGAgere Systems Guardian: 3 patents #85 of 810Top 15%
Windermere, FL: #26 of 195 inventorsTop 15%
Florida: #5,450 of 67,251 inventorsTop 9%
Overall (All Time): #481,000 of 4,157,543Top 15%
10 Patents All Time
David C. Brady has been granted 10 US patents while listed as an inventor at AT&T. The first was granted in 1999 and the most recent in October 2004. David C. Brady ranks #481,000 of 4,157,543 US inventors in our database (top 11.6%). Patent records list David C. Brady in Windermere, FL, US.

Patents per Year

Patents granted per year, 1999 to 2004Bar chart with a peak of 2 patents in 1999.peak 21999: 2 patents19992000: 2 patents20002001: 2 patents20012002: 1 patents20022003: 2 patents20032004: 1 patents2004

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
6800255 System and method for the abatement of toxic constituents of effluent gases Steven M. Browne, James L. Flack, Mark Mitchell 2004-10-05
6670242 Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer Yi Ma, Pradip K. Roy 2003-12-30
6548422 Method and structure for oxide/silicon nitride interface substructure improvements Pradip K. Roy, Carlos M. Chacon 2003-04-15
6380606 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same Isik C. Kizilyalli, Pradip K. Roy, Hem M. Vaidya 2002-04-30 $8,766,000
6281138 System and method for forming a uniform thin gate oxide layer Isik C. Kizilyalli, Yi Ma, Pradip K. Roy 2001-08-28 $4,758,000
6246095 System and method for forming a uniform thin gate oxide layer Yi Ma, Pradip K. Roy 2001-06-12 $14,101,000
6090686 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same Isik C. Kizilyalli, Pradip K. Roy, Hem M. Vaidya 2000-07-18 $62,471,000
6025280 Use of SiD.sub.4 for deposition of ultra thin and controllable oxides Isik C. Kizilyalli, Yi Ma, Pradip K. Roy 2000-02-15 $76,279,000
5966627 In-situ doped silicon layers Yaw S. Obeng 1999-10-12 $77,421,000
5940736 Method for forming a high quality ultrathin gate oxide layer Yi Ma, Pradip K. Roy 1999-08-17 $71,558,000