Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

US Patent 10566439 · Granted Feb 18, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-bypass diode function for gallium arsenide photovoltaic devices2023
GaN lateral vertical HJFET with source-P block contact2022
Self-bypass diode function for gallium arsenide photovoltaic devices2021
Self-bypass diode function for gallium arsenide photovoltaic devices2021
GaN lateral vertical JFET with regrown channel and dielectric gate2021
Optoelectronic devices including heterojunction and intermediate layer2021
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2020
Photovoltaic device with back side contacts2020
GaN lateral vertical HJFET with source-P block contact2020