Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices

Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices

US Patent 6380029 · Granted Apr 30, 2002

Estimated economic value: $1,930,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mesoporous nanocrystalline film architecture for capacitive storage devices2024
Mesoporous nanocrystalline film architecture for capacitive storage devices2020
Mesoporous nanocrystalline film architecture for capacitive storage devices2018
Mesoporous nanocrystalline film architecture for capacitive storage devices2017
Mesoporous nanocrystalline film architecture for capacitive storage devices2014
Non-volatile memory and fabricating method thereof2008
Method of fabricating memory2008
Method of fabricating memory2007
Non-volatile memory and fabricating method thereof2007
Wafer level global bitmap characterization in integrated circuit technology deve2006
In-line voltage contrast determination of tunnel oxide weakness in integrated ci2006
Method of fabricating multi-bit flash memory2006