Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nickel silicide stripping after nickel silicide formation

Nickel silicide stripping after nickel silicide formation

US Patent 6362095 · Granted Mar 26, 2002

Estimated economic value: $3,803,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FDSOI semiconductor device with contact enhancement layer and method of manufact2019
Copper interconnects with improved electromigration lifetime2014
Method of forming a semiconductor device2011
Integrated circuit contact system2011
Composite barrier layers with controlled copper interface surface roughness2010
Use of scanning theme implanters and annealers for selective implantation and an2009
CMOS gates formed by integrating metals having different work functions and havi2007
Composite tantalum nitride/tantalum copper capping layer2007
Method of forming a metal gate structure with tuning of work function by silicon2006
Composite tantalum capped inlaid copper with reduced electromigration and reduce2006
Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxyni2006
Method for determining metal work function by formation of Schottky diodes with 2006