Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing

Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing

US Patent 6337246 · Granted Jan 8, 2002

Estimated economic value: $11,293,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-volatile memory with inter-die connection2025
Time-of-flight optical measurement and decoding of fast-optical signals2024
Non-invasive system and method for product formulation assessment based on produ2024
Non-volatile memory with efficient signal routing2024
Boron-containing porous membranes and methods of use thereof2023
Method of using oxygenated metal compounds for selective extraction of lithium s2023
Alkaline anion exchange membranes and methods of use thereof2023
Non-invasive systems and methods for detecting mental impairment2023
Tetravalent boron-containing proton-exchange solid supports and methods of makin2023
Process of forming an electronic device including a non-volatile memory cell2023
Split gate charge trapping memory cells having different select gate and memory 2022
Time-of-flight optical measurement and decoding of fast-optical signals2022