Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › "Method of patterning sub-0.25 lambda line features with high transmission, ""attenuated"" phase shift masks"

"Method of patterning sub-0.25 lambda line features with high transmission, ""attenuated"" phase shift masks"

US Patent 6312854 · Granted Nov 6, 2001

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Rule-based deployment of assist features2021
Rule-based deployment of assist features2019
Scattering bar OPC application method for sub-half wavelength lithography patter2011
CPL mask and a method and program product for generating the same2011
Method and apparatus for performing model-based layout conversion for use with d2011
Scattering bar OPC application method for sub-half wavelength lithography patter2011
Method of two dimensional feature model calibration and optimization2010
Method and apparatus for providing optical proximity features to a reticle patte2010
Method and apparatus for performing model-based layout conversion for use with d2010
Method and apparatus for performing model based placement of phase-balanced scat2009
Method and apparatus for decomposing semiconductor device patterns into phase an2009
Scattering bar OPC application method for sub-half wavelength lithography patter2009