Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making static random access memory cell having a trench field plate for increased capacitance

Method of making static random access memory cell having a trench field plate for increased capacitance

US Patent 5879980 · Granted Mar 9, 1999

Estimated economic value: $5,385,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Case2025
Minimizing transistor size in integrated circuits2006
Minimizing transistor size in integrated circuits2006
Reduced masking step CMOS transistor formation using removable amorphous silicon2002
Oxygen implantation for reduction of junction capacitance in MOS transistors2002
Electrical alignment test structure using local interconnect ladder resistor2002
Modulation of gate polysilicon doping profile by sidewall implantation2001
Gate structure having polysilicon layer with recessed side portions2001
Two step mask process to eliminate gate end cap shortening2001
Minimizing transistor size in integrated circuits2001
Minimizing transistor size in integrated circuits2001
Aluminum disposable spacer to reduce mask count in CMOS transistor formation2001