Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate structure having polysilicon layer with recessed side portions

Gate structure having polysilicon layer with recessed side portions

US Patent 6291864 · Granted Sep 18, 2001

Estimated economic value: $2,710,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Minimizing transistor size in integrated circuits2006
Oxygen implantation for reduction of junction capacitance in MOS transistors2002
Electrical alignment test structure using local interconnect ladder resistor2002
Modulation of gate polysilicon doping profile by sidewall implantation2001
Minimizing transistor size in integrated circuits2001
Method of asymmetrically doping a region beneath a gate2001
Forming minimal size spaces in integrated circuit conductive lines2001
Polysilicon gate having a metal plug, for reduced gate resistance, within a tren2000
Minimizing transistor size in integrated circuits2000
Static random access memory cell having buried sidewall capacitors between stora2000
Forming local interconnects in integrated circuits2000
Method for self-aligning polysilicon gates with field isolation and the resultan2000