Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dynamic memory storage capacitor having reduced gated diode leakage

Dynamic memory storage capacitor having reduced gated diode leakage

US Patent 5352913 · Granted Oct 4, 1994

Estimated economic value: $4,299,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Plasma process device and plasma process method2013
Method for positioning sub-resolution assist features2010
Substrate processing method2010
Method for forming insulation film and apparatus for forming insulation film2009
Verifying a process margin of a mask pattern using intermediate stage models2008
Line-to-line reliability enhancement using a dielectric liner for a low dielectr2008
System with meshed power and signal buses on cell array2008
System with meshed power and signal buses on cell array2007
System with meshed power and signal buses on cell array2005
Semiconductor device and fabrication method therefor2005
Fabrication process of a semiconductor device including a CVD process of a metal2005
Low-dielectric silicon nitride film and method of forming the same, semiconducto2005