Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory cell with active device for saturation capacitance discharge prior to writing

Memory cell with active device for saturation capacitance discharge prior to writing

US Patent 4922455 · Granted May 1, 1990

Estimated economic value: $23,682,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Two-color self-aligned double patterning (SADP) to yield static random access me2025
Two-color self-aligned double patterning (SADP) to yield static random access me2024
SRAM design to facilitate single fin cut in double sidewall image transfer proce2024
Two-color self-aligned double patterning (SADP) to yield static random access me2023
Testing SRAM structures2022
Two-color self-aligned double patterning (SADP) to yield static random access me2021
SRAM cell with dynamic split ground and split wordline2021
Buried contact to provide reduced VFET feature-to-feature tolerance requirements2020
Buried contact to provide reduced VFET feature-to-feature tolerance requirements2020
SRAM cell with dynamic split ground and split wordline2020
SRAM cell with dynamic split ground and split wordline2020
SRAM cell with dynamic split ground and split wordline2020