Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench formation scheme for programmable metallization cell to prevent metal redeposit

Trench formation scheme for programmable metallization cell to prevent metal redeposit

US Patent 12354695 · Granted Jul 8, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RRAM with post-patterned treated memory films to provide improved endurance char2025
Method of forming memory cell2025
Battery2025
Memory device for reducing thermal crosstalk2025
Encapsulated phase change material switch and methods for forming the same2025
Memory device having via landing protection2025
In-situ formation of a spacer layer for protecting sidewalls of a phase change m2025
Buffer layer in memory cell to prevent metal redeposition2025
Buffer layer in memory cell to prevent metal redeposition2025
Sidewall spacer structure for memory cell2025
Sidewall spacer structure for memory cell2025
Horn shaped spacer for memory devices2025