Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

US Patent 12302764 · Granted May 13, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RRAM with post-patterned treated memory films to provide improved endurance char2025
Bit line and word line connection for memory array2025
Encapsulated phase change material switch and methods for forming the same2025
Encapsulated phase change material switch and methods for forming the same2025
Encapsulated phase change material switch and methods for forming the same2025
Trench formation scheme for programmable metallization cell to prevent metal red2025
Layout for reducing loading at line sockets and/or for increasing overlay tolera2025
Memory device having via landing protection2025
Buffer layer in memory cell to prevent metal redeposition2025
Sidewall spacer structure for memory cell2025
Horn shaped spacer for memory devices2025
Memory device with composite spacer2025