Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fluorine-free tungsten ALD for dielectric selectivity improvement

Fluorine-free tungsten ALD for dielectric selectivity improvement

US Patent 12062545 · Granted Aug 13, 2024

Estimated economic value: $69,975,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conformal molybdenum deposition2025
Method of tuning film properties of metal nitride using plasma2025
Method of tuning film properties of metal nitride using plasma2025
Low resistivity metal contact stack2025
Methods and apparatus for seam reduction or elimination2025
Polishing pad conditioning apparatus2025
Seamless gapfill of metal nitrides2025
Nucleation-free gap fill ALD process2025
Plasma-enhanced deposition of film stacks2025
Systems and methods for homogenous intermixing of precursors in alloy atomic lay2025
Deposition of conformal and gap-fill amorphous silicon thin-films2025
Liner for V-NAND word line stack2025