Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Buffer layer in memory cell to prevent metal redeposition

Buffer layer in memory cell to prevent metal redeposition

US Patent 11532785 · Granted Dec 20, 2022

Estimated economic value: $3,756,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Planarization-less phase change material switch2025
Method of forming memory cell2025
Battery2025
Bit line and word line connection for memory array2025
Bit line and word line connection for memory array2025
Memory device for reducing thermal crosstalk2025
Encapsulated phase change material switch and methods for forming the same2025
Encapsulated phase change material switch and methods for forming the same2025
Trench formation scheme for programmable metallization cell to prevent metal red2025
Trench formation scheme for programmable metallization cell to prevent metal red2025
Layout for reducing loading at line sockets and/or for increasing overlay tolera2025
Layout for reducing loading at line sockets and/or for increasing overlay tolera2025