Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Engineering tensile strain buffer in art for high quality Ge channel

Engineering tensile strain buffer in art for high quality Ge channel

US Patent 11450527 · Granted Sep 20, 2022

Estimated economic value: $15,654,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Nanowire transistor fabrication with hardmask layers2025
Nanowire transistor fabrication with hardmask layers2025
Staggered vertically spaced integrated circuit line metallization with different2025
Capacitor with dual dielectric layers2025
Dielectric sidewall features for tuning thin film transistor (TFT) parasitics2025
Subtractively patterned interconnect structures for integrated circuits2025
Punch-through interconnect feature to couple upper electrodes of capacitors of m2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Compositional engineering of Schottky diode2025
Compositional engineering of Schottky diode2025