Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self aligned pattern formation post spacer etchback in tight pitch configurations

Self aligned pattern formation post spacer etchback in tight pitch configurations

US Patent 11018007 · Granted May 25, 2021

Estimated economic value: $24,728,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduced capacitance between power via bar and gates2025
Backside self aligned skip via2025
Airgap spacer for power via2025
Selective gas etching for self-aligned pattern transfer2025
Semiconductor passive device integration for silicon-on-insulator substrate2025
Self-forming barrier for use in air gap formation2025
Early backside first power delivery network2025
Early backside first power delivery network2025
Source/drain contact at tight cell boundary2025
Systems and methods of making polymeric optical layers for optical layering2025
BEOL interconnect subtractive etch super via2025
Interconnect structures with vias having vertical and horizontal sections2025