Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Embedded source/drain structure for tall FinFet and method of formation

Embedded source/drain structure for tall FinFet and method of formation

US Patent 10896976 · Granted Jan 19, 2021

Estimated economic value: $4,840,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduced capacitance between power via bar and gates2025
Dielectric tuning of negative capacitance in dual channel field effect transisto2025
Backside self aligned skip via2025
Enhanced linerless vias2025
Source/drain contact at tight cell boundary2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
In-situ low temperature dielectric deposition and selective trim of phase change2025
Wrap around metal via structure2025
Semiconductor device having hybrid middle of line contacts2025
Vertical transport field effect transistor (VTFET) with backside wraparound cont2025
Narrowing single diffusion break2025
Vertically stacked FET with strained channel2025