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Home › Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

US Patent 10720508 · Granted Jul 21, 2020

Estimated economic value: $33,796,000 ⓘ

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