Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming spacers adjacent gate structures of a transistor device

Methods of forming spacers adjacent gate structures of a transistor device

US Patent 10629739 · Granted Apr 21, 2020

Estimated economic value: $40,978,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Global-shutter pixel2025
Pixel with vertical transfer structure for dark current improvement, an image se2025
Central deep trench isolation shift2025
High dynamic range, backside-illuminated, low crosstalk image sensor with walls 2025
Distributed synchronous training architecture using stale weights2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025