Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

US Patent 10586803 · Granted Mar 10, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bonded assembly containing conductive via structures extending through word line2025
I/O modulation scheme for ultra-high data throughput with massive NAND paralleli2025
On-chip performance throttling2025
Three-dimensional memory device including a dummy word line with tapered corner 2025
Display module and display device2025
Three-dimensional memory device with separated contact regions2025
Three-dimensional memory device with a conductive drain-select-level spacer and 2024
Three-dimensional memory device with separated contact regions and methods for f2024
Three-dimensional memory device containing self-aligned bit line contacts and me2024
Three-dimensional memory device with separated source-side lines and method of m2024
Three-dimensional memory device with separated contact regions and methods for f2024
Three-dimensional memory device including laterally-undulating memory material l2024