Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field-effect transistors with a grown silicon-germanium channel

Field-effect transistors with a grown silicon-germanium channel

US Patent 10559593 · Granted Feb 11, 2020

Estimated economic value: $41,457,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a semiconductor wafer having an SOI configuration2017
Process for fabricating a transistor comprising nanoscale semiconductor features2015
Methods for etching dielectric materials in the fabrication of integrated circui2015
Superior integrity of a high-K gate stack by forming a controlled undercut on th2015
Method for stressing a thin pattern and transistor fabrication method incorporat2014
Methods of forming a semiconductor device by performing a wet acid etching proce2014
Method of forming a semiconductor structure including a wet etch process for rem2014
Methods for PFET fabrication using APM solutions2014
Methods for pFET fabrication using APM solutions2014
Methods of controlling the etching of silicon nitride relative to silicon dioxid2013
Maintaining integrity of a high-K gate stack by passivation using an oxygen plas2013
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticate2013