Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device

Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device

US Patent 10522639 · Granted Dec 31, 2019

Estimated economic value: $50,351,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Global-shutter pixel2025
Enhanced linerless vias2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Pixel with vertical transfer structure for dark current improvement, an image se2025
Central deep trench isolation shift2025
Semiconductor device having hybrid middle of line contacts2025
High dynamic range, backside-illuminated, low crosstalk image sensor with walls 2025
Narrowing single diffusion break2025
Distributed synchronous training architecture using stale weights2025
Wraparound contact with reduced distance to channel2025
Formation of trench silicide source or drain contacts without gate damage2025
Formation of trench silicide source or drain contacts without gate damage2025