Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications

Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications

US Patent 10497803 · Granted Dec 3, 2019

Estimated economic value: $65,885,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Semiconductor device including substrate layer with floating base region and gat2025
Gate all around device with fully-depleted silicon-on-insulator2025
Gradient doping epitaxy in superjunction to improve breakdown voltage2024
High-voltage devices integrated on semiconductor-on-insulator substrate2024
Asymmetric FET for FDSOI devices2024
Asymmetric FET for FDSOI devices2024
Asymmetric FET for FDSOI devices2024
Methods for forming alignment marks2024
Structure including transistor using buried insulator layer as gate dielectric a2023
Structure including transistor using buried insulator layer as gate dielectric a2023
Graded doping in power devices2023