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Home › Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device

Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device

US Patent 10446443 · Granted Oct 15, 2019

Estimated economic value: $19,042,000 ⓘ

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