Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Techniques for forming contacts to quantum well transistors

Techniques for forming contacts to quantum well transistors

US Patent 10177249 · Granted Jan 8, 2019

Estimated economic value: $28,117,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Nanowire transistor fabrication with hardmask layers2025
Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Trench-based quantum dot devices with conductive liners2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Smooth titanium nitride layers and methods of forming the same2025
Method of integrating a capacitor including a non-linear polar material with a t2025
Gate coupled non-linear polar material based capacitors for memory and logic2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025