Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region

Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region

US Patent 10170544 · Granted Jan 1, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Direct backside self-aligned contact2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Stacked transistors having self aligned backside contact with backside replaceme2025
Heterogeneous gate all around dielectric thickness2025
Methods, apparatus, and manufacturing system for self-aligned patterning of a ve2025
Semiconductor backside contact structure with increased contact area2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025