Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor backside contact structure with increased contact area

Semiconductor backside contact structure with increased contact area

US Patent 12439672 · Granted Oct 7, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked vertical transport field effect transistor with anchors2025
CFET with independent gate control and low parasitic capacitance2025
CFET with independent gate control and low parasitic capacitance2025
Transistors with backside source/drain contact and spacer2025
Reduced capacitance between power via bar and gates2025
Direct backside self-aligned contact2025
Direct backside self-aligned contact2025
Direct backside self-aligned contact2025
Backside self aligned skip via2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025