Issued Patents All Time
Showing 176–200 of 329 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7825492 | Isolated vertical power device structure with both N-doped and P-doped trenches | — | 2010-11-02 |
| 7745885 | High voltage power MOSFET having low on-resistance | — | 2010-06-29 |
| 7736976 | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands | Jean-Michel Guillot | 2010-06-15 |
| 7704842 | Lateral high-voltage transistor with vertically-extended voltage-equalized drift region | — | 2010-04-27 |
| 7705397 | Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow | — | 2010-04-27 |
| 7586165 | Microelectromechanical systems (MEMS) device including a superlattice | — | 2009-09-08 |
| 7586148 | Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches | — | 2009-09-08 |
| 7557394 | High-voltage transistor fabrication with trench etching technique | Françoise Hébert | 2009-07-07 |
| 7544544 | Low capacitance two-terminal barrier controlled TVS diodes | Adrian I. Cogan, Jin Qiu | 2009-06-09 |
| 7535041 | Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance | — | 2009-05-19 |
| 7531850 | Semiconductor device including a memory cell with a negative differential resistance (NDR) device | — | 2009-05-12 |
| 7531829 | Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance | — | 2009-05-12 |
| 7504305 | Technique for forming the deep doped regions in superjunction devices | — | 2009-03-17 |
| 7473966 | Oxide-bypassed lateral high voltage structures and methods | — | 2009-01-06 |
| 7442584 | Isolated vertical power device structure with both N-doped and P-doped trenches | — | 2008-10-28 |
| 7411249 | Lateral high-voltage transistor with vertically-extended voltage-equalized drift region | — | 2008-08-12 |
| 7397097 | Integrated released beam layer structure fabricated in trenches and manufacturing method thereof | Joseph C. McAlexander | 2008-07-08 |
| 7339252 | Semiconductor having thick dielectric regions | — | 2008-03-04 |
| 7304347 | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands | Jean-Michel Guillot | 2007-12-04 |
| 7244970 | Low capacitance two-terminal barrier controlled TVS diodes | Adrian I. Cogan, Jin Qiu | 2007-07-17 |
| 7224027 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon | — | 2007-05-29 |
| 7202494 | FINFET including a superlattice | Kalipatnam Vivek Rao, Scott A. Kreps | 2007-04-10 |
| 7199427 | DMOS device with a programmable threshold voltage | — | 2007-04-03 |
| 7138289 | Technique for fabricating multilayer color sensing photodetectors | Richard K. Robinson | 2006-11-21 |
| 7094621 | Fabrication of diaphragms and “floating” regions of single crystal semiconductor for MEMS devices | — | 2006-08-22 |